Tatsuhiko Fujihira is a Director and the Semiconductor CTO of Fuji Electric Device Technology Co., Ltd. He received BE and ME degrees from Tokyo University and DE degree from Yamanashi University, Japan, in 1982, 1984, and 1998 respectively. Dr. Fujihira has over 20 years of experience in the development of power semiconductor devices and process technologies. His activities have been focused on high-voltage and/or high-current power semiconductor devices, for example IGBT, power MOSFET, and high-voltage or power ICs. Dr. Fujihira has authored more than 20 papers, including the earliest paper on superjunction devices, holds more than 100 patens, and is the receiver of three scientific awards.